InAs/In0.52Al0.48As quantum wire structure with the specific layer-ordering orientation on InP(001)-Reference-Cited by-同舟云学术

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InAs/In0.52Al0.48As quantum wire structure with the specific layer-ordering orientation on InP(001)

Published:1999-02 Issue:1-2 Volume:197 Page:95-98
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wu J.,Xu B.,Li H.X.,Mo Q.W.,Wang Z.G.,Zhao X.M.,Wu D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

2. Measurement of nonuniform distribution of strain in InGaAs/GaAs quantum wires

3. Intensity phase coherence in three-mode Fabry-Pérot lasers

4. Dimensionality effects on strain and quantum confinement in lattice-mismatchedInAsxP1−x/InP quantum wires

5. A simple method for calculating strain distributions in quantum‐wire structures

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1. The Research Progress of Quantum Dot Lasers and Photodetectors in China;Journal of Nanoscience and Nanotechnology;2011-11-01

2. Growth of Low-Dimensional Semiconductors Structures;Comprehensive Semiconductor Science and Technology;2011

3. InAs quantum wire induced composition modulation in an In0.53Ga0.37Al0.10As barrier layer grown on an InP substrate;Journal of Applied Physics;2010-08

4. Epitaxial Semiconductor Quantum Wires;Journal of Nanoscience and Nanotechnology;2008-07-01

5. Ordering of Self-Assembled Quantum Wires on InP(001) Surfaces;One-Dimensional Nanostructures;2008

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