Probing electrical properties of a silicon nanocrystal thin film using x-ray photoelectron spectroscopy-Reference-Cited by-同舟云学术

Probing electrical properties of a silicon nanocrystal thin film using x-ray photoelectron spectroscopy

Published:2022-08-01 Issue:8 Volume:93 Page:083906
ISSN:0034-6748
Container-title:Review of Scientific Instruments
language:en
Short-container-title:Review of Scientific Instruments

Author:

Laudari Amrit¹,Pathiranage Sameera¹,Thomas Salim A.²,Petersen Reed J.³,Anderson Kenneth J.²,Pringle Todd A.²,Hobbie Erik K.²,Oncel Nuri¹^ORCID

Affiliation:

1. Department of Physics and Astrophysics, University of North Dakota, Grand Forks, North Dakota 58202, USA

2. Materials and Nanotechnology Program, North Dakota State University, Fargo, North Dakota 58108, USA

3. Department of Physics, North Dakota State University, Fargo, North Dakota 58108, USA

Abstract

We performed x-ray photoelectron spectroscopy measurements on a thin film of Si nanocrystals (SiNCs) while applying DC or AC external biases to extract the resistance and the capacitance of the thin film. The measurement consists of the application of 10 V DC or square wave pulses of 10 V amplitude to the sample at various frequencies ranging from 0.01 to 1 MHz while recording x-ray photoemission data. To analyze the data, we propose three different models with varying degrees of accuracy. The calculated capacitance of SiNCs agrees with the experimental value in the literature.

Publisher

AIP Publishing

Subject

Instrumentation

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0090166

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