Hydrogenation‐defined stripe‐geometry In0.5(AlxGa1−x)0.5P quantum‐well lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346962
Reference8 articles.
1. Donor neutralization in GaAs(Si) by atomic hydrogen
2. Hydrogen passivation of shallow-acceptor impurities inp-type GaAs
3. Hydrogenation of Si‐ and Be‐doped InGaP
4. Stripe‐geometry AlxGa1−xAs‐GaAs quantum well lasers via hydrogenation
5. High‐power gain‐guided coupled‐stripe quantum well laser array by hydrogenation
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2. Chapter 4 OMVPE Growth of AlGalnP for High-Efficiency Visible Light-Emitting Diodes;Semiconductors and Semimetals;1997
3. Effects of proton implantation and hydrogen plasma passivation on electrical properties of InGaAlP and InGaP;Solid-State Electronics;1995-06
4. Hydrogen passivation effects in InGaAlP and InGaP;Journal of Applied Physics;1994-12
5. Suppression of Zn diffusion due to hydrogen passivation inp ‐AlGaInP;Applied Physics Letters;1994-09-05
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