Author:
Polyakov A.Y,Chelniy A.A,Govorkov A.V,Smirnov N.B,Milnes A.G,Pearton S.J,Wilson R.G,Balmashnov A.A,Aluev A.N,Markov A.V
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
4 articles.
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1. Electrical isolation of InGaP by proton and helium ion irradiation;Journal of Applied Physics;2002-10-15
2. Radiation Damage in GaAs;Radiation Effects in Advanced Semiconductor Materials and Devices;2002
3. Schottky contacts on reactive-ion etched InGaP;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-11
4. Passivation of dopants in InGaP using ECR hydrogenation;Materials Science and Engineering: B;1996-04