InsituHall measurement of two‐dimensional electron gas at Al0.3Ga0.7As/GaAs interface irradiated with 10‐keV Ar ions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107551
Reference22 articles.
1. Effects of dry etching on GaAs
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4. Defect study in GaAs bombarded by low-energy focused ion beams
5. Distribution Profiles and Annealing Characteristics of Defects in GaAs Induced by Low-Energy FIB Irradiation
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. GaAs Based Field Effect Transistors for Radiation-Hard Applications;Radiation Effects in Advanced Semiconductor Materials and Devices;2002
2. Thermal and Athermal Migration of Ion-Irradiation Defects in Al0.3Ga0.7As/GaAs Heterostructures;Materials Science Forum;1995-11
3. Damages in AlGaAs/GaAs Heterostructures Induced by KeV-Electron-Beam Irradiation;Materials Science Forum;1995-11
4. Annealing Behavior of Irradiation-Induced Damage in an AlGaAs/GaAs Heterostructure by Low-Energy Electron Beam;Japanese Journal of Applied Physics;1994-12-30
5. Electron Beam Induced Degradation of 2Deg in AlGaAs/GaAs Heterostructure;MRS Proceedings;1993
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