Grain‐boundary interfacial states in BeO‐doped SiC ceramics: Photoisothermal capacitance transient spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350873
Reference6 articles.
1. Carrier transport through grain boundaries in semiconductors
2. The physics of metal oxide varistors
3. Grain boundary states and varistor behavior in silicon bicrystals
4. Gap states in phosphorus-doped amorphous silicon studied by isothermal capacitance transient spectroscopy
5. Isothermal Capacitance Transient Spectroscopy for Determination of Deep Level Parameters
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Evaluation of Single Grain Boundaries in ZnO: Rare-Earth Varistor by Micro-Electrodes;Key Engineering Materials;1998-05
2. Spectroscopic Analysis of Chemical Compositions and Electronic States of Grain Boundaries of Some Functional Ceramics.;NIPPON KAGAKU KAISHI;1996
3. Surface States Due to Fe Atoms Deposited on a TiO2 Surface Coated with a Porous SiO2 Film;The Journal of Physical Chemistry;1996-01-01
4. Analysis of Additives on BeO-Doped SiC Ceramics by Secondary Ion Mass Spectroscopy;Journal of the Ceramic Society of Japan;1995
5. Chemical State of Bi2O3-doped ZnO Varistors Studied by a DV-Xα Method;Computer Aided Innovation of New Materials II;1993
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