Reduction in the concentration ofDXcenters in Si‐doped GaAlAs using the planar doping technique
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99167
Reference15 articles.
1. Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
2. Investigation of theDXcenter in heavily dopedn-GaAs
3. Theory of theDXcenter inAlxGa1−xAs and GaAs crystals
4. Deep donor model for the persistent photoconductivity effect
5. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
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1. Effect of non-square structure potential on the multisubband electron mobility in double quantum well structure;Physica B: Condensed Matter;2018-09
2. Reduction of Low-Temperature Nonlinearities in Pseudomorphic AlGaAs/InGaAs HEMTs Due to Si-Related DX Centers;IEEE Transactions on Electron Devices;2010-04
3. Bipolaron mechanism of DX center in AlxGa1-xAs:Si;Acta Physica Sinica;2010
4. DX-like centers in InAs∕GaAs QDIPs observed by polarization-dependent Fourier transform infrared spectroscopy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007
5. Specific features of 2D electron distribution over the subbands of the quantum well of a single heavily doped heterojunction;Semiconductors;2006-12
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