A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4870599
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2. Synchronous 8-bit Non-Volatile Full-Adder based on Spin Transfer Torque Magnetic Tunnel Junction;IEEE Transactions on Circuits and Systems I: Regular Papers;2015-07
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