Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon-Reference-Cited by-同舟云学术

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Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon

Published:2015-11-16 Issue:20 Volume:107 Page:201907
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lupina L.,Zoellner M. H.,Niermann T.,Dietrich B.,Capellini G.,Thapa S. B.,Haeberlen M.,Lehmann M.,Storck P.,Schroeder T.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4935856

Reference17 articles.

1. GaN-based optoelectronics on silicon substrates

2. GaN and digital electronics: A way out of Moore's law?

3. Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part I. Impact of the nitridation chemistry on material characteristics

4. Growth of GaN Thin Films on Sapphire Substrate by Low Pressure MOCVD

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1. Electrical properties of ScN(111) layers grown on semi-insulating GaN(0001) by plasma-assisted molecular beam epitaxy;Physical Review Applied;2024-07-25

2. Quasiclassical Anderson transition and thermally activated percolative charge transport in single-crystalline ScN;Physical Review B;2024-04-25

3. Optical properties of ScN layers grown on Al2O3(0001) by plasma-assisted molecular beam epitaxy;Applied Physics Letters;2023-09-11

4. Demonstration of compensated n-type scandium nitride Schottky diodes;Journal of Physics D: Applied Physics;2023-01-31

5. Organic Heteroepitaxy Growth of High-Performance Responsive Thin Films with Solution Shearing Crystals as Templates;ACS Materials Letters;2022-06-06

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