Influence of GaAs surface stoichiometry on the interface state density of as‐grown epitaxial ZnSe/epitaxial GaAs heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102534
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3. Effect of ZnSe/GaAs interface treatment in ZnSe quality control for optoelectronic device applications;Applied Surface Science;2017-05
4. Semiconductor Heterojunctions;An Essential Guide to Electronic Material Surfaces and Interfaces;2016-05-20
5. Nature of the ZnSe/GaAs interface investigated by atom probe tomography;Scripta Materialia;2013-10
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