Cross-sectional scanning tunneling microscopy study of InGaAs quantum dots on GaAs(001) grown by heterogeneous droplet epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1479196
Reference21 articles.
1. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
2. Self-organized quantum dots and quantum dot lasers (invited)
3. Origin of the inhomogenous broadening and alloy intermixing in InAs/GaAs self-assembled quantum dots
4. Size Quantization and Zero Dimensional Effects in Self Assembled Semiconductor Quantum Dots
5. Island Size Scaling in InAs/GaAs Self-Assembled Quantum Dots
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2. Materials Characterization Using Scanning Tunneling Microscopy: From Fundamentals to Advanced Applications;Handbook of Materials Characterization;2018
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