p-GaAs(Cs,O)-photocathodes: Demarcation of domains of validity for practical models of the activation layer
Author:
Affiliation:
1. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Avenue, Novosibirsk 630090, Russia
2. STFC Daresbury Laboratory, ASTeC and the Cockcroft Institute, Warrington WA4 4AD, United Kingdom
Funder
Science and Technology Facilities Council (STFC)
Russian Academy of Sciences (RAS)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/apl/106/18/1.4919447.pdf?itemId=/content/aip/journal/apl/106/18/10.1063/1.4919447&mimeType=pdf&containerItemId=content/aip/journal/apl
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4. Effects of atomic hydrogen and deuterium exposure on high polarization GaAs photocathodes
5. Record high-average current from a high-brightness photoinjector
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