Residual Ga2O3 and Cs contribution to increase in maximum quantum efficiency of NEA-GaAs surface formed through two-step thermal cleaning process

Author:

Sada Y.,Jono M.,Kobayashi D.,Yoshitake Y.,Meguro T.

Funder

Japan Society for the Promotion of Science

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference37 articles.

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2. High-brightness spin-polarized electron source using semiconductor photocathodes;Nishitani;Jpn. J. Appl. Phys.,2009

3. The GaAs spin polarized electron source;Pierce;Rev. Sci. Instrum.,1980

4. Development of spin-polarized transmission electron microscope;Kuwahara;J. Phys.: Conf. Ser.,2011

5. 30-kV spin-polarized transmission electron microscope with GaAs–GaAsP strained superlattice photocathode;Kuwahara;Appl. Phys. Lett.,2012

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