Interfacial negative biexcitons in a monolayer WS2/InGaN quantum dots heterostructure

Abstract

In this work, we fabricated a Van der Waals heterostructure of monolayer (ML) WS2 and InGaN quantum dots (QDs). This heterostructure is divided into coupled and uncoupled regions based on the thickness of the inserted hBN layer. Upon measuring its PL spectra, we identified an interfacial negative biexciton, which consists of a trion in ML WS2 and an exciton in QDs, in the coupled region. This interfacial negative biexciton features the negative charge of the trion and the quantum confinement of QDs, with its relative intensity showing a strong dependence on the excitation photon energy and featuring a significant threshold. Our work highlights the effective coupling within the mixed-dimensional heterostructure, offering new prospects for the study of many-body physics.