Influence of ion energy and arrival rate on x-ray crystallographic properties of thin ZrOx films prepared on Si(111) substrate by ion-beam assisted deposition-Reference-Cited by-同舟云学术

Influence of ion energy and arrival rate on x-ray crystallographic properties of thin ZrOx films prepared on Si(111) substrate by ion-beam assisted deposition

Published:2000-09-15 Issue:6 Volume:88 Page:3773-3775
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Matsuoka M.,Isotani S.,Chubaci J. F. D.,Miyake S.,Setsuhara Y.,Ogata K.,Kuratani N.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1286108

Reference9 articles.

1. Effects of ion energy and arrival rate on the composition of zirconium oxide films prepared by ion‐beam assisted deposition

2. Many-electron singularity in X-ray photoemission and X-ray line spectra from metals

3. Influence of the oxygen stoichiometry on the structural and optical properties of reactively evaporated ZrOxfilms

4. Electronic structure of insulating zirconium nitride

5. An XPS study of the interaction of oxygen with zirconium

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