Short time helium annealing for solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors
Author:
Affiliation:
1. School of Information and Communication Engineering, Chungbuk National University, Cheongju, Chungbuk 28644, Korea
Funder
National Research Foundation of Korea
Ministry of Science, ICT and Future Planning
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5040019
Reference26 articles.
1. Intrinsic parameter extraction of a-InGaZnO thin-film transistors by a gated-four-probe method
2. Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process
3. Chemical and Electrical Properties of Low-Temperature Solution-Processed In–Ga–Zn-O Thin-Film Transistors
4. Present status of amorphous In–Ga–Zn–O thin-film transistors
5. Solution-processed InGaZnO-based thin film transistors for printed electronics applications
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1. Rapid thermal annealing effect on performance variations of solution processed indium–gallium–zinc-oxide thin-film transistors;AIP Advances;2023-11-01
2. Gas sensor based on indium trioxide nanostructures in review;3RD INTERNATIONAL CONFERENCE ON ENERGY AND POWER, ICEP2021;2022
3. Preparation of nano indium oxide for optoelectronics application;2ND INTERNATIONAL CONFERENCE ON MATERIALS ENGINEERING & SCIENCE (IConMEAS 2019);2020
4. Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials;Journal of Semiconductors;2019-12-01
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