Er3+ photoluminescence properties of erbium-doped Si/SiO2 superlattices with subnanometer thin Si layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1383802
Reference13 articles.
1. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon
2. Optical properties of PECVD erbium-doped silicon-rich silica: evidence for energy transfer between silicon microclusters and erbium ions
3. 1.54 μm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+
4. Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide
5. Er–carrier interaction and its effects on the Er3+ luminescence of erbium-doped Si/SiO2 superlattices
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1. Efficient 1.53μm emission and energy transfer in Si/Er–Si–O multilayer structure;Materials Research Bulletin;2011-02
2. Surface and Superlattice;Nanostructure Science and Technology;2009
3. a-Si nanolayer induced enhancement of the 1.53μm photoluminescence in Er3+ doped a-Al2O3 thin films;Applied Physics Letters;2008-03-24
4. Influence of Si crystallization evolution on the Er luminescence in superlattices Er:Si /Al2O3;2008 5th IEEE International Conference on Group IV Photonics;2008
5. Direct Patterning, Conformal Coating, and Erbium Doping of Luminescent nc-Si/SiO2 Thin Films from Solution Processable Hydrogen Silsesquioxane;Advanced Materials;2007-11-05
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