a-Si nanolayer induced enhancement of the 1.53μm photoluminescence in Er3+ doped a-Al2O3 thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2900662
Reference22 articles.
1. Photoluminescence performance of pulsed-laser deposited Al2O3 thin films with large erbium concentrations
2. The role of Er3+–Er3+ separation on the luminescence of Er–doped Al2O3 films prepared by pulsed laser deposition
3. Quantum Theory of Radiation
4. Modification of the spontaneous emission rate ofEu3+ions close to a thin metal mirror
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1. Cr3+ sensitized near infrared emission in Al2O3:Cr,Nd/Yb phosphors;Journal of Alloys and Compounds;2019-06
2. Size-controlled Ge nanostructures for enhanced Er3+ light emission;OPT LETT;2014
3. Optical studies of amorphous Ge nanostructures in Al2O3 produced by pulsed laser deposition;Thin Solid Films;2013-08
4. Intense up-conversion emissions of Yb3+/Dy3+co-doped Al2O3nanopowders prepared by non-aqueous sol—gel method;Chinese Physics B;2012-09
5. Enhanced emission of Er3+ from alternately Er doped Si-rich Al2O3 multilayer film with Si nanocrystals as broadband sensitizers;Applied Surface Science;2012-01
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