Molecular beam epitaxial growth of AlxGa1−xAs (x=0.2–0.7) on (111)B‐GaAs using As4and As2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106045
Reference18 articles.
1. AlGaAs/GaAs(111) heterostructures grown by molecular beam epitaxy
2. Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates
3. Interface disorder in GaAs/AlGaAs quantum wells grown by molecular beam epitaxy on 0.5°‐misoriented (111)Bsubstrates
4. Growth of GaAs, AlGaAs, and InGaAs on (111)B GaAs by molecular-beam epitaxy
5. Optimum Growth Conditions of GaAs(111)B Layers for Good Electrical Properties by Molecular Beam Epitaxy
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1. Impact of arsenic species on self-assembly of triangular and hexagonal tensile-strained GaAs(111)A quantum dots;Semiconductor Science and Technology;2020-08-24
2. Growth and structural characteristics of (Ga,Al)As Bragg reflectors grown by MBE on nominal and vicinal (111)B GaAs substrates;Journal of Crystal Growth;1999-05
3. Temperature effect on surface flatness of molecular beam epitaxy homoepitaxial layers grown on nominal and vicinal (111)B GaAs substrates;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-01
4. Growth and characterization of heterojunction bipolar transistor on GaAs (111)B substrate by molecular beam epitaxy;Solid-State Electronics;1996-08
5. Facet generation during molecular beam epitaxy of GaAs/AlGaAs multilayers on GaAs (001) patterned substrates;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-07
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