Optical effective mass of high density carriers in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94854
Reference20 articles.
1. Some features of laser annealing of implanted silicon layers
2. Change of the electron effective mass in extremely heavily doped n-type Si obtained by ion implantation and laser annealing
3. Picosecond time‐resolved plasma and temperature‐induced changes of reflectivity and transmission in silicon
4. Observation of an electronic plasma in picosecond laser annealing of silicon
5. Time-Resolved Reflectivity Measurements of Femtosecond-Optical-Pulse-Induced Phase Transitions in Silicon
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