Change of the electron effective mass in extremely heavily doped n-type Si obtained by ion implantation and laser annealing
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference10 articles.
1. Heavily doped semiconductors and devices
2. Determination of Optical Constants and Carrier Effective Mass of Semiconductors
3. Infrared Absorption and Electron Effective Mass inn-Type Gallium Arsenide
4. MEASUREMENT OF DIFFUSED SEMICONDUCTOR SURFACE CONCENTRATIONS BY INFRARED PLASMA REFLECTION
5. Determination of Free Electron Effective Mass of n‐Type Silicon
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