Low‐pressure chemical vapor deposition of lowin situphosphorus doped silicon thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105280
Reference8 articles.
1. Electronic transport in amorphous and microcrystalline phosphorus-doped silicon films prepared by thermal LPCVD
2. Deposition and electrical properties ofinsituphosphorus‐doped silicon films formed by low‐pressure chemical vapor deposition
3. Structural and technological properties of heavily in situ phosphorus-doped low pressure chemically vapour deposited silicon films
4. Pressure dependence ofinsituboron‐doped silicon films prepared by low‐pressure chemical vapor deposition. I. Microstructure
5. The influence of plasma annealing on electrical properties of polycrystalline Si
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4. Controlled in Situ n-Doping of Silicon Nanowires during VLS Growth and Their Characterization by Scanning Spreading Resistance Microscopy;The Journal of Physical Chemistry C;2009-12-23
5. Doping Limits of Grown insitu Doped Silicon Nanowires Using Phosphine;Nano Letters;2009-01-14
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