Profile Estimation of High‐Concentration Arsenic Diffusions in Silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1661253
Reference5 articles.
1. Interactions in Sequential Diffusion Processes in Semiconductors
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5. A STUDY OF DIFFUSED LAYERS OF ARSENIC AND ANTIMONY IN SILICON USING THE ION‐SCATTERING TECHNIQUE
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2. Arsenic redistribution at theSiO2/Siinterface during oxidation of implanted silicon;Physical Review B;1998-10-15
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