Analysis of defects in In2O3:H synthesized in presence of water vapor and hydrogen gas mixture
Author:
Affiliation:
1. Physics Division, Lawrence Livermore National Laboratory, Livermore, California 94550, USA
2. Materials Science Division, Lawrence Livermore National Laboratory, Livermore, California 94550, USA
Funder
Lawrence Livermore National Laboratory
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/5.0023216
Reference37 articles.
1. Hydrogen-doped In2O3as High-mobility Transparent Conductive Oxide
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4. Evaporated Sn‐doped In2O3films: Basic optical properties and applications to energy‐efficient windows
5. Electrical and structural properties of low resistivity tin‐doped indium oxide films
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1. Role of hydrogen-doping for compensating oxygen-defect in non-stoichiometric amorphous In2O3−x: Modeling with a machine-learning potential;Journal of Applied Physics;2023-09-21
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