Direct evidence for self‐annihilation of antiphase domains in GaAs/Si heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101870
Reference21 articles.
1. Material properties of high‐quality GaAs epitaxial layers grown on Si substrates
2. Atomic structure of the GaAs/Si interface
3. Misfit and Threading Dislocations in GaAs Layers Grown on Si Substrates by MOCVD
4. High resolution electron microscopy of misfit dislocations in the GaAs/Si epitaxial interface
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