Optical spectroscopy of bulk GaN crystals grown from a Na–Ga melt
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1521575
Reference15 articles.
1. Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
2. Pressure-Controlled Solution Growth of Bulk GaN Crystals under High Pressure
3. Growth of GaN single crystals from a Na–Ga melt at 750°C and 5MPa of N2
4. GaN single crystal growth using high-purity Na as a flux
5. Growth of 5 mm GaN Single Crystals at 750 °C from an Na−Ga Melt
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