A dynamic operation of a PIN photodiode-Reference-Cited by-同舟云学术

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A dynamic operation of a PIN photodiode

Published:2015-01-19 Issue:3 Volume:106 Page:031115
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Okhonin S.¹,Gureev M.¹,Sallin D.²,Appel J.³,Koukab A.²,Kvasov A.⁴,Pastre M.²,Polzik E. S.³,Tagantsev A. K.⁴⁵,Uddegard F.¹,Kayal M.²

Affiliation:

1. ActLight SA, EPFL Innovation Park, Building I, 1015 Lausanne, Switzerland

2. Electronics laboratory, École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland

3. The Niels Bohr Institute, University of Copenhagen, Copenhagen DK-2100, Denmark

4. Ceramics laboratory, École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland

5. Ioffe Physical Technical Institute, 194021 St. Petersburg, Russia

Funder

Government of the Russian Federation

Swiss National Science Foundation (Schweizerische Nationalfonds)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4906488

Reference16 articles.

1. Depletion-Layer Photoeffects in Semiconductors

2. Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain–bandwidth product

3. Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects

4. Waveguided Ge/Si Avalanche Photodiode With Separate Vertical SEG-Ge Absorption, Lateral Si Charge, and Multiplication Configuration

5. High-performance Ge-on-Si photodetectors

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