Enhancing electrostatic coupling in silicon quantum dot array by dual gate oxide thickness for large-scale integration-Reference-Cited by-同舟云学术

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Enhancing electrostatic coupling in silicon quantum dot array by dual gate oxide thickness for large-scale integration

Published:2020-04-20 Issue:16 Volume:116 Page:162106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee N.¹^ORCID,Tsuchiya R.¹,Shinkai G.¹,Kanno Y.¹^ORCID,Mine T.²,Takahama T.²,Mizokuchi R.³^ORCID,Kodera T.³^ORCID,Hisamoto D.²,Mizuno H.¹^ORCID

Affiliation:

1. Center for Exploratory Research, Research & Development Group, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan

2. Center for Technology Innovation, Research & Development Group, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan

3. Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5141522

Reference21 articles.

1. Quantum supremacy using a programmable superconducting processor

2. A blueprint for building a quantum computer

3. Quantum computation with quantum dots

4. Interfacing spin qubits in quantum dots and donors—hot, dense, and coherent

5. An addressable quantum dot qubit with fault-tolerant control-fidelity

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