Pentacene transistor encapsulated by poly-para-xylylene behaving as gate dielectric insulator and passivation film
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2120894
Reference21 articles.
1. Effects of film morphology and gate dielectric surface preparation on the electrical characteristics of organic-vapor-phase-deposited pentacene thin-film transistors
2. Modification of the electric conduction at the pentacene∕SiO2 interface by surface termination of SiO2
3. High-mobility polymer gate dielectric pentacene thin film transistors
4. Pentacene organic field-effect transistor on metal substrate with spin-coated smoothing layer
5. A polymer gate dielectric for high-mobility polymer thin-film transistors and solvent effects
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