RF-sputtered Z-cut electro-optic barium titanate modulator on silicon photonic platform-Reference-Cited by-同舟云学术

RF-sputtered Z-cut electro-optic barium titanate modulator on silicon photonic platform

Published:2023-08-15 Issue:7 Volume:134 Page:
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Posadas Agham B.¹²^ORCID,Stenger Vincent E.³^ORCID,DeFouw John D.³^ORCID,Warner Jamie H.⁴^ORCID,Demkov Alexander A.¹²^ORCID

Affiliation:

1. 1 Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA

2. 2 La Luce Cristallina, Inc., Austin, Texas 78759, USA

3. SRICO, Inc. 3 , Columbus, Ohio 43235, USA

4. Walker Department of Mechanical Engineering, The University of Texas at Austin 4 , Austin, Texas 78712, USA

Abstract

Epitaxial BaTiO3 integrated on Si or Si-on-insulator using off-axis radio frequency sputtering is a promising material platform for building electro-optic modulators based on the Pockels effect. Barium titanate thin films with c-axis orientation have been epitaxially integrated on silicon-on-insulator wafers. They exhibit excellent structural quality with Pockels coefficient (r33) > 130 pm/V and propagation loss <2 dB/cm. Our results show that off-axis sputtered BaTiO3 films yield electro-optic modulation similar to that of high-quality films grown by molecular beam epitaxy and that the material is suitable for implementation of low-power Mach–Zehnder interferometer electro-optic modulators integrated on silicon in a Z-cut configuration.

Funder

Air Force Office of Scientific Research

U.S. Air Force

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/5.0160186/18087353/073101_1_5.0160186.pdf

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