Effect of poling voltage on electro-optic response of epitaxial BaTiO<sub>3</sub> on Si grown by sputtering-Reference-Cited by-同舟云学术

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Effect of poling voltage on electro-optic response of epitaxial BaTiO₃ on Si grown by sputtering

Published:2024-04-15 Issue: Volume: Page:1-2
ISSN:
Container-title:2024 IEEE Silicon Photonics Conference (SiPhotonics)
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Author:

Posadas A. B.¹,Wilson A. B.²,Demkov A. A.²

Affiliation:

1. La Luce Cristallina, Inc.,Austin,Texas,United States,78759

2. The University of Texas at Austin,Dept. of Physics,Austin,Texas,United States,78712

Funder

National Science Foundation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10543257/10543280/10543821.pdf?arnumber=10543821

Reference13 articles.

1. Epitaxial integration of BaTiO3 on Si for electro-optic applications

2. A strong electro-optically active lead-free ferroelectric integrated on silicon

3. Thick BaTiO3 Epitaxial Films Integrated on Si by RF Sputtering for Electro-Optic Modulators in Si Photonics

4. Materials for emergent silicon-integrated optical computing

5. A BaTiO3-Based Electro-Optic Pockels Modulator Monolithically Integrated on an Advanced Silicon Photonics Platform

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