Temperature dependence of 1/fnoise in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337736
Reference11 articles.
1. Low-frequency fluctuations in solids:1fnoise
2. Flicker Noise in Electronic Devices
3. Experimental studies on 1/f noise
4. 1/ƒ noise is no surface effect
5. Structure in the flicker-noise power spectrum ofn-InSb
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1. Bulk property of 1/f noise for piezoresistive Ni/Cr thin films in pressure sensors on flexible substrate;Microsystem Technologies;2014-12-04
2. Phonon mechanism of mobility equilibrium fluctuation and properties of 1/f-noise;Physica B: Condensed Matter;2006-06
3. Measurement of 1/f noise and its application in materials science;Current Opinion in Solid State and Materials Science;2002-02
4. Radiation Effects and Low-Frequency Noise in Silicon Technologies;Low Temperature Electronics;2001
5. Principles of flicker noise spectroscopy and its application to disordered semiconductors: IonImplanted silicon;Russian Microelectronics;2000-07
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