Principles of flicker noise spectroscopy and its application to disordered semiconductors: IonImplanted silicon

Author:

Makoviichuk M. I.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference74 articles.

1. Kogan, Sh.M., Low-Frequency Current Noise with a 1/f type Spectrum in Solids,Usp. Fiz. Nauk, 1985, vol. 145, no. 2, pp. 285–328.

2. Luk’yanchikova, N.B.,Fluktuatsionnye yavleniya v poluprovodnikakh i poluprovodnikovykh priborakh (Fluctuations in Semiconductors and Semiconductor Devices), Moscow: Radio i Svyaz’, 1990.

3. Noise in Physical Systems and 1/f Fluctuations,Proc. 14th Int. Conf., Claeys, C and Simoen, S., Eds., Leuven, 1997.

4. D’yakonova, N.V., Levinshtein, M.E., and Rumyantsev, S.L., The Nature of Bulk 1/f Noise in GaAs and Si,Fiz. Tekh. Poluprovodn. (Leningrad), 1991, vol. 25, no. 12, pp. 2065–2104.

5. Palenskis, V., Flicker Noise Problems: A Review,Lit. Fiz. Sb., 1990, vol. 30, no. 2, pp. 107–152.

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