First principles calculation of electron-phonon and alloy scattering in strained SiGe
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3669446
Reference23 articles.
1. A graphical representation of the piezoresistance coefficients in silicon
2. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
3. First-Principles Calculation of Alloy Scattering inGexSi1−x
4. Low- and high-field electron-transport parameters for unstrained and strained Si/sub 1-x/Ge/sub x/
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2. Electronic heat generation in semiconductors: Non-equilibrium excitation and evolution of zone-edge phonons via electron–phonon scattering in photo-excited germanium;Applied Physics Letters;2023-01-02
3. Effect of Strain on Room-Temperature Spin Transport in Si0.1Ge0.9;Physical Review Applied;2022-08-02
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