Three-dimensional peculiarities in an avalanche transistor provide a broadened range of amplitudes and durations of the generated pulses
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4764114
Reference16 articles.
1. Alloyed Junction Avalanche Transistors
2. Avalanche injection and second breakdown in transistors
3. Breakdown Phenomena in Semiconductors and Semiconductor Devices
4. Properties of the transient of avalanche transistor switching at extreme current densities
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