Affiliation:
1. State Key Laboratory of Advanced Electromagnetic Technology (Huazhong University of Science and Technology), Power Electronics and Energy Management Key Laboratory, Ministry of Education of China, School of Electrical and Electronic Engineering , Wuhan 430074, China
Abstract
Due to the erratic switching phenomenon of the Si avalanche bipolar junction transistor (ABJT) in the Marx bank circuit (MBC), an explanation of the leakage current trigger mode in the overvoltage state with a lack of displacement current is proposed. There are random switching properties (i.e., switching or non-switching) in the ABJT with emitter–base shorted, triggered by a voltage ramp to the overvoltage state temporarily with dV/dt rate close to 0 V/ns. The experimental conditions and characteristics of erratic behaviors are summarized. The optical visualization of the current channel in an erratic switching state is obtained, and the corresponding physical model of the leakage current trigger mode is established. It shows that the switching event occurs with the change in the position of the conductive channel. The process of emitter electron injection is caused by the leakage current in the overvoltage state instead of the displacement current. Meanwhile, the intensity of this trigger mode is weak, and the instability of the leakage current may cause the failure of switching. The study of erratic switching is of great significance for the working reliability of MBCs and failure analysis of ABJTs. The proposed explanation is validated by the agreement between the simulation results and the experimental observations.
Funder
Delta Power Electronics Science and Education Development Program of Delta Group
Subject
General Physics and Astronomy
Cited by
2 articles.
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