Observation of phonon‐plasmon coupled modes at the interface between ZnSe and semi‐insulating GaAs by micro‐Raman spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109554
Reference12 articles.
1. Pseudomorphic ZnSe/n‐GaAs doped‐channel field‐effect transistors by interrupted molecular beam epitaxy
2. Second-order nonlinear effects in asymmetric quantum-well structures
3. Influence of GaAs surface stoichiometry on the interface state density of as‐grown epitaxial ZnSe/epitaxial GaAs heterostructures
4. Effects of ZnSe epitaxial growth on the surface properties of GaAs
5. Studies on an (NH4)2Sx-Treated GaAs Surface Using AES, LEELS and RHEED
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1. Surface characterization studies of orientation patterned ZnSe doped with Cr2+;SPIE Proceedings;2015-02-27
2. Enhancement of surface phonon modes in the Raman spectrum of ZnSe nanoparticles on adsorption of 4-mercaptopyridine;The Journal of Chemical Physics;2014-02-21
3. Raman spectroscopic studies of ZnSe/GaAs interfaces;Journal of Raman Spectroscopy;2007
4. Carrier effects on Raman spectra from ZnSe/GaAs heterostructures;Journal of Physics: Condensed Matter;2002-05-17
5. Anomalous behaviour of optical phonon modes in ZnSe epitaxial layers;Journal of Raman Spectroscopy;1997-07
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