Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown on free-standing GaN substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3605572
Reference20 articles.
1. Successful fabrication of white light emitting diodes by using extremely high external quantum efficiency blue chips
2. Origin of efficiency droop in GaN-based light-emitting diodes
3. Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes
4. Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop
5. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers
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