Competitive Si and La effect in HfO2 phase stabilization in multi-layer (La2O3)0.08(HfO2) films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4819198
Reference12 articles.
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4. First-principles study on doping and phase stability ofHfO2
5. Influence of lattice parameters on the dielectric constant of tetragonal ZrO2 and La-doped ZrO2 crystals in thin films deposited by atomic layer deposition on Ge(001)
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1. Electrical Properties and Interfacial Issues of HfO2/Ge MIS Capacitors Characterized by the Thickness of La2O3 Interlayer;Nanomaterials;2019-05-04
2. Interfacial and electrical characteristics of tetragonal HfO2/Al2O3 multilayer grown on AlGaN/GaN;Journal of Materials Science: Materials in Electronics;2018-02-10
3. The Study of Electrical Properties for Multilayer La2O3/Al2O3 Dielectric Stacks and LaAlO3 Dielectric Film Deposited by ALD;Nanoscale Research Letters;2017-03-29
4. Impacts of Annealing Conditions on the Flat Band Voltage of Alternate La2O3/Al2O3 Multilayer Stack Structures;Nanoscale Research Letters;2016-09-13
5. Influences of different structures on the characteristics of H 2 O-based and O 3 -based La x Al y O films deposited by atomic layer deposition;Chinese Physics B;2016-05
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