Direct observation of carrier depletion around a dislocation in GaP by scanning spreading resistance microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3266926
Reference21 articles.
1. Some Predicted Effects of Temperature Gradients on Diffusion in Crystals
2. CXXIV. Statistics of the occupation of dislocation acceptor centres
3. Many Body Interaction in Alkali Halides
4. Charged dislocation induced optical absorption in GaAs
5. Dislocation energy bands in GaAs: An optical absorption study
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1. Impact of Defects on the Performance of High-Mobility Semiconductor Devices;High Mobility Materials for CMOS Applications;2018
2. Resolution in Carrier Profiling Semiconductors by Scanning Spreading Resistance Microscopy and Scanning Frequency Comb Microscopy;Applied Microscopy;2017-09-30
3. The roles of buffer layer thickness on the properties of the ZnO epitaxial films;Applied Surface Science;2016-12
4. Optical and electrical properties of dislocations in plastically deformed GaN;Journal of Crystal Growth;2014-10
5. Local current conduction due to edge dislocations in deformed GaN studied by scanning spreading resistance microscopy;The European Physical Journal Applied Physics;2013-01
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