Optical and electrical properties of dislocations in plastically deformed GaN-Reference-Cited by-同舟云学术

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Optical and electrical properties of dislocations in plastically deformed GaN

Published:2014-10 Issue: Volume:403 Page:72-76
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yonenaga I.,Ohno Y.,Yao T.,Edagawa K.

Funder

Grant-in-Aid for Scientific Research on Priority Area

Grant-in-Aid for Scientific Research

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference41 articles.

1. Luminescence properties of defects in GaN;Reshchikov;J. Appl. Phys.,2005

2. Spatial distribution of the luminescence in GaN thin films;Ponce;Appl. Phys. Lett.,1996

3. Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition;Rosner;Appl. Phys. Lett.,1997

4. Characterization of threading dislocations in GaN epitaxial layers;Hino;Appl. Phys. Lett.,2000

5. Carrier and defect dynamics in photoexcited semi-insulating epitaxial GaN layers;Gaubas;J. Appl. Phys.,2004

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