Open‐circuit voltage‐decay behavior inp‐njunction diode at high injection
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.335770
Reference14 articles.
1. On the Transient Behavior of Semiconductor Rectifiers
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4. Analysis of the photo voltage decay (PVD) method for measuring minority carrier lifetimes inP‐Njunction solar cells
5. Theoretical investigations of experimentally-observed Open-Circuit Voltage-Decay (OCVD) curves
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2. A Self-Consistent Model of the OCVD Behavior of Si and 4H-SiC $\hbox{p}^{+}\hbox{-n-n}^{+}$ Diodes;IEEE Transactions on Electron Devices;2009-12
3. Observation of Retarded Recombination in ChargeSeparation Structures;MRS Proceedings;2003
4. Distributed parameter analysis of dark I–V characteristics of the solar cell: estimation of equivalent lumped series resistance and diode quality factor;IEE Proceedings G Circuits, Devices and Systems;1993
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