InGaAs shallow junction fabrication using Langmuir–Blodgett film diffusion source
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102994
Reference12 articles.
1. Diffusion of Cd in InP and In0.53Ga0.47As
2. Fully ion-implanted abrupt pn junction on semi-insulating InP
3. Diffusion in III-V semiconductors from spin-on-film sources
4. Reliable Spin‐On Source for Acceptor Diffusion into III/V Compound Semiconductors
5. Monolayer surface doping of GaAs from a plated zinc source
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1. Structure and Characterization of Nanocomposite Langmuir−Blodgett Films of Poly(maleic monoester)/Fe3O4 Nanoparticle Complexes;The Journal of Physical Chemistry B;2002-06-27
2. Structural studies of Langmuir–Blodgett films containing rare-earth metal cations;Colloids and Surfaces A: Physicochemical and Engineering Aspects;2002-02
3. Effect of anion type on monolayers and Langmuir–Blodgett films of gadolinium stearate;Colloids and Surfaces A: Physicochemical and Engineering Aspects;2000-06
4. Ultrathin Aluminosilicate Films from Langmuir−Blodgett Multilayers;Langmuir;1998-01-01
5. SiC formation at the interface of polyimide Langmuir–Blodgett film and silicon;Journal of Applied Physics;1996-08-15
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