Diffusion of Cd in InP and In0.53Ga0.47As
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Growth and characterization of InGaAsP lattice-matched to InP
2. LPE growth of high purity InP and In1−xGaxP1−yAsy
3. Transferred-electron effect in In0.53Ga0.47As
4. Diffusion of Cd into InP at 680°C
5. Diffusion of Cd And Zn In InP between 550 and 650°C
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Zinc diffusion in InP from spin-on films of various zinc concentrations;Semiconductor Science and Technology;1995-04-01
2. Copper-related defects inIn0.53Ga0.47As grown by liquid-phase epitaxy;Physical Review B;1993-01-15
3. Annealing and activation of Si implanted InP;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1992-07
4. InGaAs shallow junction fabrication using Langmuir–Blodgett film diffusion source;Applied Physics Letters;1990-05-21
5. Cd diffusion in In0.53Ga0.47As;Crystal Research and Technology;1989-03
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