Infrared quenching of photoconductivity and the study of gap states in hydrogenated amorphous silicon alloys
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331058
Reference11 articles.
1. Modifications in optoelectronic behavior of plasma-deposited amorphous semiconductor alloys via impurity incorporation
2. New features of the temperature dependence of photoconductivity in plasma‐deposited hydrogenated amorphous silicon alloys
3. Analysis of photoconductivity applied to cadmium-sulfide-type photoconductors
4. Gap state spectroscopy using two beam photoconductivity in A-SI:H
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2. Modulated Dual-Beam Photoconductivity in Hot-Pressured a-As2Se3;Acta Physica Polonica A;2020-09
3. Influence of deposition parameters on defect formation in a-SiGe:H alloys;Philosophical Magazine B;1995-05
4. Experimental Evidence for the Applicability of an Effective Temperature Concept ina−Si:H;Physical Review Letters;1994-12-05
5. Some observations on the photoconductivity of amorphous semiconductors;Journal of Non-Crystalline Solids;1992-01
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