Enhanced carrier injection hotspot effect by direct and simple ITO surface engineering-Reference-Cited by-同舟云学术

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Enhanced carrier injection hotspot effect by direct and simple ITO surface engineering

Published:2021-05-31 Issue:22 Volume:118 Page:223301
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jiang Hui-Hui¹²,Xiao Jing²,Huang Hai-Tian¹,Wu Di¹,Song Ru-Xin¹,Xu Rong¹,Gao Xu¹^ORCID,Xu Jian-Long¹,Duhm Steffen¹^ORCID,Chi Li-Feng¹³,Wang Sui-Dong¹³^ORCID

Affiliation:

1. Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu 215123, People's Republic of China

2. College of Physics and Electronic Engineering, Taishan University, Taian, Shandong 271000, People's Republic of China

3. Macao Institute of Materials Science and Engineering (MIMSE), Macau University of Science and Technology, Taipa 999078, Macau, People's Republic of China

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Shandong Province Key Research and Development Program

Collaborative Innovation Center of Suzhou Nano Science and Technology

the "111" Project

Joint International Research Laboratory of Carbon-Based Functional Materials and Devices

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0047565

Reference23 articles.

1. A review of the theory and technology for ohmic contacts to group III–V compound semiconductors

2. Energy Level Alignment and Interfacial Electronic Structures at Organic/Metal and Organic/Organic Interfaces

3. Molecular Electrical Doping of Organic Semiconductors: Fundamental Mechanisms and Emerging Dopant Design Rules

4. Interfaces in organic electronics

5. Low Work Function Surface Modifiers for Solution-Processed Electronics: A Review

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Energy-Level Alignment Governs Doping-Related Fermi-Level Shifts in Polymer Films;ACS Applied Electronic Materials;2023-09-19

2. Interface energetics make devices;Electronic Structure;2022-08-25

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