Schottky diode characteristics and 1/f noise of high sensitivity reduced graphene oxide/Si heterojunction photodetector-Reference-Cited by-同舟云学术

Schottky diode characteristics and 1/f noise of high sensitivity reduced graphene oxide/Si heterojunction photodetector

Published:2016-03-28 Issue:12 Volume:119 Page:124303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zhu Miao¹²,Li Xinming³,Li Xiao¹²,Zang Xiaobei¹,Zhen Zhen¹²,Xie Dan⁴,Fang Ying³,Zhu Hongwei¹²

Affiliation:

1. State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China

2. Center for Nano and Micro Mechanics, Tsinghua University, Beijing 100084, China

3. National Center for Nanoscience and Technology, Zhongguancun, Beijing 100190, China

4. Tsinghua National Laboratory for Information Science and Technology (TNList), Institute of Microelectronics, Tsinghua University, Beijing 100084, China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4944945

Reference49 articles.

1. Graphene-On-Silicon Schottky Junction Solar Cells

2. Forward-bias diode parameters, electronic noise, and photoresponse of graphene/silicon Schottky junctions with an interfacial native oxide layer

3. Tunable Graphene–Silicon Heterojunctions for Ultrasensitive Photodetection

4. Anomalous Behaviors of Graphene Transparent Conductors in Graphene-Silicon Heterojunction Solar Cells

5. Photodetectors based on graphene, other two-dimensional materials and hybrid systems

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