Forward-bias diode parameters, electronic noise, and photoresponse of graphene/silicon Schottky junctions with an interfacial native oxide layer
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611, USA
2. Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
Funder
Research Opportunity Seed Fund
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4931142
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