The effect of ion implantation and solute atoms on the interdiffusion in amorphous Si/Ge multilayers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348848
Reference29 articles.
1. Diffusion of implanted impurities in amorphous Si
2. Gold diffusion in chemical‐vapor‐deposited amorphous silicon
3. Composition- and Temperature-Dependence of Ion Mixing in Amorphous Si/Ge Artificial Multilayers
4. The Effect of Ion Implantation on the Interdiffusion in Si/Ge Amorphous Artificial Multilayers
5. X‐ray measurements of ion mixing in amorphous Si/Ge artificial multilayers
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Surface modification of Si/Ge multi-layers by MeV Si ion bombardment;Surface and Coatings Technology;2009-06
2. Ion-implantation modification of lithium–phosphorus oxynitride thin-films;Journal of Power Sources;2002-06
3. Model for Dopant-Induced Enhancement in Solid-Phase Epitaxial Recrystallization of Amorphous Si;Japanese Journal of Applied Physics;1996-12-01
4. Activation-energy spectrum and structural relaxation dynamics of amorphous silicon;Physical Review B;1993-09-01
5. Diffusion of Gold in Sputtered Amorphous Silicon;Crucial Issues in Semiconductor Materials and Processing Technologies;1992
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