The Effect of Ion Implantation on the Interdiffusion in Si/Ge Amorphous Artificial Multilayers-Reference-Cited by-同舟云学术

The Effect of Ion Implantation on the Interdiffusion in Si/Ge Amorphous Artificial Multilayers

Published:1987 Issue: Volume:103 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Park B.,Spaepen F.,Poate J. M.,Priolo F.,Jacobson D. C.,Pai C. S.,White A. E.,Short K. T.

Abstract

ABSTRACTAmorphous Si/Ge artificial multilayers have been implanted with Si and B at liquid nitrogen temperature, and partially ion mixed with Ar at different temperatures. In all cases, the square of the mixing length was found to be proportional to the dose. Annealing of Si-implanted samples showed that after relaxation the diffusivity appeared unaffected by the implantation process. Annealing of the B-implanted samples showed an enhancement of the diffusivity at the higher dose. The diffusive component of the square of the mixing length in the Ar-ion mixed samples has an Arrhenius-type temperature dependence, with an activation enthalpy of 0.22 eV.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference7 articles.

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3. DIFFUSION

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